| PART |
Description |
Maker |
| C180 C180D |
High Power Silicon Controlled Rectifier
|
New Jersey Semi-Conductor P...
|
| C150 |
High Power Silicon Controlled Rectifier
|
New Jersey Semi-Conduct...
|
| 2N1909 2N1910 2N1911 2N1912 2N1913 2N1914 2N1915 2 |
High Power Silicon Controlled Rectifier 110 A RMS 25 to 1200 Volts
|
New Jersey Semi-Conductor Products, Inc.
|
| PCR406 PCR406-5 PCR406-6 |
KPT 10C 10#20 SKT PLUG
UTC PCR406 silicon controlled rectifiers are high performance planner diffused PNP devices 0.8 A, 400 V, SCR, TO-92
UTC PCR406 silicon controlled rectifiers are high performance planner diffused PNP devices 星期PCR406可控硅整流器是高性能的规划扩散PNP器件
UTC PCR406 silicon controlled rectifiers are high performance planner diffused PNP devices
|
UNISONIC TECHNOLOGIES CO LTD
Unisonic Technologies Co., Ltd.
UTC[Unisonic Technologies]
|
| X24042 X24042P X24042P-2.7 X24042P-3 X24042PI X240 |
4K (512 x 8bit) serial E2PROM
Hot Swap Controller IC; Hot Swap Controller Type:Negative Voltage; Controlled Voltage Min:-10V; Controlled Voltage Max:-80V; Number of Controlled Voltages:1; Package/Case:8-SOIC; Power Good Output:Active High
|
XICOR[Xicor Inc.]
|
| BF1012 Q62702-F1487 Q62702-S535 Q62702-C1659 |
NPN Silicon AF and Switching Transistor (High breakdown voltage Low collector-emitter saturation voltage) NPN硅自动对焦和开关晶体管（高击穿电压低集电极发射极饱和电压）
Silicon N-Channel MOSFET Tetrode (For low noise, high gain controlled input stages up to 1GHz Operating voltage 12V Integrated stabilized bias network
From old datasheet system
|
SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
|
| S2600B S2600M S2600D S2600N S26.0B S26.0N S26.0D S |
HIGH VOLTAGE MEDIUM CURRENT SILICON CONTROLLED RECTIFIERS 中型高压电流可控硅整流装
|
List of Unclassifed Manufacturers
ETC[ETC]
ETC [ETC]
Electronic Theatre Controls, Inc.
|
| MJE2955T03 MJE34003 MJE52103 MJE585203 MJE80203 MR |
COMPLEMENTARY SILICON POWER TRANSISTORS
COMPLEMETARY SILICON POWER TRANSISTORS
SILICON NPN TRANSISTOR
HIGH VOLTAGE PNP POWER TRANSISTOR
SILICON NPN POWER DARLINGTON TRANSISTOR
RF Power Field Effect Transistors
880 MHz, 40 W AVG. 26 V SINGLE N-CDMA N-Channel Enhancement-Mode Lateral MOSFETs
RF LDMOS Wideband Integrated Power Amplifiers
GENERAL PURPOSE L TO X-BAND GaAs MESFET
10 A, 60 V, PNP, Si, POWER TRANSISTOR, TO-220AB
|
FREESCALE
NEC
STMICROELECTRONICS[STMicroelectronics]
|
| NTE5548 NTE5541 NTE5545 |
Silicon controlled rectifier (SCR). Repetitive peak off-state & reverse voltage Vdrm,Vrrm = 400V. RMS on-state current 35A.
Silicon Controlled Rectifier (SCR) 35 Amp
|
NTE[NTE Electronics]
|
| MCR106-6G MCR106-8G MCR106-8 MCR106 MCR106-6 MCR10 |
Sensitive Gate Silicon Controlled Rectifier; Package: TO-225; No of Pins: 3; Container: Bulk; Qty per Container: 500 4 A, 600 V, SCR, TO-225AA
SENSITIVE GATE SILICON CONTROLLED RECTIFIERS
|
ONSEMI[ON Semiconductor]
|
